Flip-chip structure light-emitting diode and its manufacturing method summary

The invention discloses a flip-chip structure light emitting diode and a manufacturing method thereof, comprising: forming a first metal layer on a heat dissipation substrate, and respectively forming a p electrode region and an n electrode region; forming a metal bump on the first metal layer Forming a second metal layer on the p and n electrodes of the LED chip; bonding the p electrode and the n electrode of the LED chip to the p electrode region and the n electrode region on the heat dissipation substrate, respectively, and contacting The second metal layer and the metal bump array are pressurized, ultrasonicated, and heated. The flip-chip structure light emitting diode of the present invention comprises: a heat dissipation substrate; a first metal layer on the heat dissipation substrate, including a p electrode region and an n electrode region; and a metal bump array located at the first metal Above the p-electrode region on the layer; an LED chip, the n-electrode of the LED chip is located above the n-electrode region of the first metal layer, and the p-electrode of the LED chip is located at the first metal layer Above the p-electrode region.


(Assistant editor: xiaohu)