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Recently, Vishay Intertechnology, Inc. announced that it has introduced the VLMx51 series of power SMD LEDs in a small PLC C2 Plus package with high luminous flux and very low junction-to-ambient thermal resistance for a variety of lighting applications Lamp bead patch.
The VLMR51, VLMK51, VLMY51, and VLMW51 devices use high-efficiency InGan and AllnGaP silicon technology with a luminous flux of 8.5 lm to 30.6 lm and an illuminance of 2850 mcd to 9750 mcd. These LEDs feature very low junction-to-ambient thermal resistance down to 100k/W with power dissipation of up to 738mW, resulting in drive currents up to 200mA Light Emitting Diode In-line.
With these excellent performance parameters, plus a small package size of 3.5mm x 3.5mm x 1.2mm, the VLMx51 series becomes in-vehicle and exterior lighting, signal and symbol lights, decorative lighting, architectural lighting, backlighting, sign lights, traffic Ideal for lamps and all general lighting applications.
These LEDs comply with RoHS Directive 2002/95/EC and WEEE 2002/96/EC and are compatible with the infrared reflow process curve specified by J-STD-020. These devices are preconditioned according to JEDEC Level 2a specifications and can withstand the 2kV (HBM) ESD voltage specified by JESD 22-A114-B.
Device specification sheet:
Part Number VLMR51 VLMK51 VLMY51 VLMW51
Color red amber yellow white
Luminous intensity (mcd) 2,850 to 5,600 2,850 to 5,600 3,550 to 7,150 8,000 (typical)LED light strip
Typical luminous flux (lm) 10.6@140 mA 11.9@ 140 mA 13.2@ 140 mA 18.1 to 30.6@ 150 mA
Thermal resistance (knot to environment) 100 K/W 100 K/W 100 K/W 125 K/W
Power dissipation 530 mW 530 mW 530 mW 738 mW
Drive current 200 mA 200 mA 200 mA 180 mA
Technology AllnGaP AllnGaP AllnGaP InGaN
November 21, 2022
September 29, 2022
August 10, 2024
April 30, 2024
September 25, 2021
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November 21, 2022
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